Topological Semimetals for Electronic Devices

Over the past few years, three-dimensional (3D) topological materials have emerged as a new class of electronic materials. Materials such as cadmium arsenide (Cd3As2) feature exceptionally high Fermi velocities, the potential to accommodate high charge densities in topological electronic states that provide protection from backscattering, and can be integrated with traditional semiconductors, making them attractive for application in solid state devices that operate into the terahertz frequency regime. In this paper, we discuss the performance of two types of transistors, namely a MOSFET that uses Cd
3
As
2
as the channel and a HET that uses Cd3As
2
as the base. We also discuss unique aspects of these devices that reflect the properties of Dirac electrons, such the linearity in the frequency performance.