22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C

This work studies the impact of increase in temperature on the RF and analog figures of merit (FoMs) of 22 nm FD-SOI MOSFETs from room temperature of $25^{\circ}C$ to $175^{\circ}C$. DC and RF measurements are performed on the MOSFETs to extract the main RF FoMs over temperature. From DC measurements in temperature, the zero-temperature coefficient (ZTC) point and threshold voltage (V
Th
) reduction on increasing temperature is observed. Through direct on-wafer RF measurements reductions of 21% in the current-gain cut-off frequency (f
T
) and of of 14% in the maximum oscillation frequency $(f_{\max})$ are observed at 175°C compared to $25^{\circ}C$. In particular, the evolution over temperature of trans conductance $(g_{m})$ appears to be one of the major causes of the degradation in f
T
and f
max
.