Scalable Non-Linear Electrical Model for Industrial GaN HEMT Technologies up to 50 GHz

The downsizing of the gate length in Gallium Nitride (GaN) process allows targeting higher frequency applications and simultaneously improve general performances of MMIC circuits. N on-linear models used to design these power applications must accurately reproduce the electrical, power and thermal behavior of the transistors. Design-kits commonly gather scalable models for a fixed gate length, varying number of gate fingers (N) and gate width (W). In this paper, we present a modeling method implemented in all our generations of GaN HEMT technologies. This model structure, initiated with our first
$0.5-\mu \mathrm{m}$
gate length power transistors for sub 6 GHz application, has then been adjusted for the first GaN MMIC technology with
$0.25-\mu \mathrm{m}$
and
$0.15-\mu \mathrm{m}$
gate length. This core set of equation - enhanced generation after generation - is adapted hereafter with
$0.1-\mu \mathrm{m}$
technology dedicated to address millimeter-wave (mm-wave) applications up to Q-Band.