High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser Annealing

In this work, the fiber-coupler semiconductor laser annealing (FCSLA) is tried to process the patterned solution-processed tungsten–zinc–tin oxide (WZTO) as an active layer of thin-film transistor (TFT). Thermal diffusion behavior for the laser-annealed solution-processed WZTO TFT has been simulated by the COMSOL Multiphysics model, and combined with the morphologies of the films under different laser power densities, the preferred 70-W/cm
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laser-annealed WZTO thin films exhibit smooth surface with a root mean square roughness of 0.307 nm and a high transmittance of 88%. When the laser power density increases to 100 W/cm
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, the thermal damage of WZTO thin films occurs, and then, the preferred 70-W/cm
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laser-annealed WZTO TFT exhibits the highest mobility of 7.01 cm
$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$
and the best stability in terms of storage time for one month. In addition, the comprehensive performance of device is comparable to those of thermal annealing WZTO TFTs. The demonstration of simple and efficient FCSLA functionalization of solution-processed WZTO TFTs is developed and can be applied to high-throughput display manufacturing.