GaN-Based GAA Vertical CMOS Inverter

In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the simulated physical models and associated model parameters have been well calibrated with the reported experimental results of GaN n-channel NWFET and the simulated typical electrical parameters match the measured data. According to the simulation results, the GaN GAA vertical nanowire CMOS inverter exhibits rail-to-rail operation, low static power dissipation, large noise margins, high thermal stability and good scalability.