Design and Analysis of Self-Switchable Low Noise Amplifier for Sub-6 GHz 5G NR

This paper reports the design and analysis of a two-stage low noise amplifier (LNA) MMIC using GaAs pHEMT technology with a transistor gate length of $0.1\mu\mathrm{m}$. The selected center frequency of designed LNA is 3.5GHz, suitable for sub-6 GHz 5G NR. The simulated gain of the designed LNA is $34.43\pm 0.9\mathrm{dB}$ from 3.4 to 3.6GHz, while the noise Figure is 0.71 dB at 3.5 GHz. The designed LNA MMIC has also been made switchable to protect circuit from the high power signal. The gain of the switchable LNA circuit is 31.93 dB, with a noise Figure of 0.91dB at the center frequency of 3.5GHz.