A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance

We utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO
₂
metal–oxide–silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected using the Fitzgerald and Grove dc
$I-V$
approach to compare the effects of high-field electrical stressing and gamma irradiation on defect formation at and near the Si/SiO
₂
interface. As anticipated, both greatly increase the concentration of
$P_{b}$
centers (silicon dangling bonds at the interface) densities. The irradiation also generated a significant increase in the dc
$I-V$
EDMR response of
$E^{\prime }$
centers (oxygen vacancies in the SiO
₂
films), whereas the generation of an
$E^{\prime }$
EDMR response in high-field stressing is much weaker than in the gamma irradiation case. These results likely suggest a difference in their physical distribution resulting from radiation damage and high electric field stressing.