Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons

We report on the radiation response of a novel p-type photogate pixel. Sensors are exposed to gamma rays, and fusion neutrons during deuterium plasma operation at W–Tungsten–Environment in Steady-state Tokamak (WEST), showing dark current increase with total dose.