Design of a Ka-band MMIC Low Noise Amplifier for 5G applications

In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.