Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission

Gated Si-tip with on-tip integrated gate-all-around field effect transistor using hyperbolic nano-channel (Hy-GAAFET) for actively controlled field electron emission is presented. Fully IC compatible nano-fabrication procedures were developed to obtain the Hy-GAAFET and the on-tip integration with the Si-tip emitter. The Hy-GAAFET exhibit characteristics of
${I}_{\textit {on}}/{I}_{\textit {off}} =\sim 10$
⁴
,
${I}_{\textit {sat}} = 0.25 ~\mu \text{A}/\mu \text{m}$
at
${V}_{\textit {gaa}}=-0.4$
V and 20 mV of drain-induced barrier lowering. The emission current of the gated Si-tip can be actively regulated by the Hy-GAAFET gate voltage, i.e., 0.4 pA/mV with an extractor voltage of 53 V and showed a well-optimized current stability. This on-chip integrated device is promising for applications in modern miniature vacuum nano electronics.