Improved Reliability and Read Latency Under Radiation Observed in HfZrOx Based p-FeFETs With AlON Interfacial Layer

HfZrO_x-based p- and n-FeFETs with high-k AlON interfacial layer (IL) were employed as the platform to evaluate how $\gamma $ -rays radiation affects the memory performance and reliability characteristics. Even with radiation dose of 1 Mrad, the memory window (MW) and retention in terms of current ratio are hardly changed for both types of FeFETs due to the improved interfacial quality by the AlON IL. Although showing a smaller MW than n-FeFETs, p-FeFETs are considered with higher competitive advantages in terms of more robust endurance against radiation up to $10^{{5}}$ cycles by long-pulse ( $10^{\text {-4}}$ s) cycling due to mitigated hot-electrons induced hole generation. Furthermore, the much-improved read latency for p-FeFETs also maintains after being subjected to 1 Mrad radiation doses. These promising results suggest that p-FeFETs possess a great potential for high-speed, high-reliability applications in the radiation environment.