Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects

Several attempts have been made in the last decade for the advancement of field effect transistors. In this paper, comparative analysis of small signal modeling of FET has been presented. An improved and a proficient parameter extraction strategy applied to FET for mm-wave applications, different performance parameters regarding losses and their variation with higher frequencies are presented. Measurements of the scattering parameters from frequency range of 0.1 GHz to 40 GHz at room temperature with maximum transconductance have been performed. The execution is surveyed through S-parameters estimations to assess the devices intrinsic and extrinsic parameters by utilizing de-embedding method. Experimental and simulated values are compared and found to be in excellent agreement.