High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source

Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 /spl mu/m thick GaAs separate confinement layer.