The properties of ion-implanted InGaAs single quantum-well semiconductor saturable absorber mirrors for passive mode-locking

We demonstrate an InGaAs single quantum well SESAM for operation around 1060 nm which was manufactured by MOCVD growth and ion-implantation. The results from specular reflectance as well as time resolved and fluence dependent reflectivity measurements are shown. We have used the SESAMs to mode-lock a range of low and medium power lasers at 1040 nm-1064 nm in both picosecond and femtosecond operation depending on the laser crystal, cavity arrangement and SESAM properties. In view of the greatly different gain properties of these laser crystals, ion-implantation has proved a versatile technique for tailoring of the SESAM properties to suit a particular laser material.