Loss Analysis of Full Bridge LLC Resonant Converter with Wide Input Range Using Si and SiC Switches

The objective of this paper is to design, analyze and compare the characteristics of two full-bridge LLC converters. Two different convertors are designed with silicon (Si) MOSFETs and Silicon carbide (SiC) MOSFETs. The study comprises of mathematical modeling and simulations of the two converters. A comparative analysis of power losses for a 3kW prototype of a full-bridge LLC resonant converter with a wide range of input voltage is elaborated in detail. The efficiency of the two MOSFETs is studied under a wide range of input voltages and loads. The conduction and switching losses are analyzed for different loads. Silicon carbide SiC-MOSFET has an advantage over Si MOSFET due to its overall performance. But still, due to low cost, the Si-MOSFET can be preferred.