Effect of Negative Capacitance on Heterojunction Tunnel Field Effect Transistor

The emerging technologies such as Internet of Things (IoT) and Biomedical electronics in the field of ultra-lower power applications have a major challenge of power scaling using modern CMOS technologies. The devices used in these technologies (such as biomedical and IoT based applications, require ultra-low power consumption as well as a scaled switching device. To achieve an energy efficient switching with lesser power consumption, a device with super steeper subthreshold swing is required. The superior switching characteristics of Tunnel Field Effect Transistor (TFET), facilitates the current conduction by Band to Band Tunnelling (BTBT) mechanism while maintaining adequate performance, makes it suitable for low power applications. Negative capacitance phenomenon, if applied to TFET, can further enhance the current ratio Ion/Ioff and makes subthreshold swing super steep. This work proposes a heterojunction Negative Capacitance Tunnel FET (NC-TFET) device that has achieved an average SS of 9.38 mv/dec in case of PZT material with transconductance g
m
of 2.516. The enhancement of device design and analysis of analog performance parameters of proposed NC-TFET covers the future scope of this work.