InGaP PHEMTs for wireless power applications

This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation. A 15 mm device delivers 30 dBm output power, 10.2 dB associated gain, and 67% power added efficiency at 1 dB compression point while operated at 3.5 V and 1.9 GHz.