Intrinsic noise currents in deep submicron MOSFETs

A systemic extraction method to obtain the induced gate noise (i/sub g/i/sub g/*), channel thermal noise (i/sub d/i/sub d/*) and their cross-correlation term (i/sub g/i/sub d/*) in submicron MOSFETs directly from scattering and RF noise measurements is presented and verified with measurements. The extracted noise currents versus frequency, bias condition and channel length for MOSFETs from a 0.18 /spl mu/m CMOS process are presented and discussed.