SiC MOSFET Avalanche Breakdown Voltage Model for Temperature and Gate Voltage Dependence

This paper proposes a model for describing the avalanche breakdown voltage (BV
DS
). The model takes into account the gate-source voltage (V
GS
) dependence and the temperature (T) dependence. Both dependencies are due to different phenomena, therefore the product of two quadratic functions of independent variables (V
GS
and T) is considered to characterize BV
DS
. The coefficients of these functions are identified by nonlinear least-squares. A 650 V SiC MOSFET is characterized with the proposed technique. Results show a good agreement between experimental and predicted values.