Characteristics and Modeling of PN Junction Diode in Verilog-A Including Reverse Recovery

Compact models of semiconductor devices play a crucial role in design and analysis of large circuits. This paper presents a qualitative study of diode compact models including temperature dependency and reverse recovery phenomenon. The comprehensive behaviour of p-n junction diode is captured using Verilog-A language which is compatible to standard SPICE simulators. In this work, three types of diode models have been investigated based on temperature scale. Similar to SPICE compact models, a set of tuneable parameters are defined and presented for each type. In addition, an extensive study of reverse recovery has been done to determine the magnitude of reverse current and to evaluate model parameters like charge storage time and transition time based on input switching and temperature. Simulation results show that the developed model in this work is compatible like standard compact model scalable with area, temperature and intrinsic carrier concentration.