Degradation of SOI SRAMs at 25°C Operating Conditions

In this paper, a dynamic life evaluation test of $0.35\mu \mathrm{m}$ PD SOI SRAM is conducted at $250^{\circ}\mathrm{C}$ ambient temperatures. Experiments show that the SOI SRAMs can safely operate for more than 600 hours at $250^{\circ}\mathrm{C}$. Analysis of failed devices demonstrates that electro-migration effect and Kirkendall effect may be the direct causes of device degradation. And underlying leakage of the device will greatly accelerate the degradation of the metal interconnect and package, which needs to be improved in future work.