On the Correction of the Effects of Electrical Transients in the Measured Thermal Transients

Thermal transient testing is a principal methodology for the structural analysis of power assemblies and for the estimation of peak temperatures in the system which influence lifetime. For both purposes the key parameter is the starting temperature of the transient, the measurement of which is hindered by several electric effects that distort the early section of the measured thermal transients. These effects can be physically shortened and partly diminished with proper test planning. On the other hand, the distorted section can be reconstructed by physical considerations, using appropriate extrapolation or a simulation based on the well-known physical structure of the semiconductor chip and its attachment.This article deals with the physical and procedural correction of these electrical effects in case of different devices.