Low-Voltage GaN Based Inverter for Power Steering Application

In the paper, an experimental evaluation of a low voltage Gallium Nitride (GaN) based inverter suitable for power steering application is presented. The inverter switches belong to the last generation of low voltage enhancement-mode normally-off GaN Field-Effect Transistor (FET). The main advantage in the usage of these devices is the high switching frequency capability with consequently volume reduction of the passive components. On the other hand, the layout and the device packaging solution are a challenge to reduce the parasitic inductances. Furthermore, the dv/dt increasing with the switching frequency need a deep investigation in a motor drive application. The paper deals with the advances and drawbacks of the GaN FETs in two-level Pulse Width Modulation (PWM) motor drive applications providing a piece of detailed experimental evidence and design guidelines.