Maximum Channel Temperature Estimation for GaN HEMT transistors with n-fingers

a simple analytical model to calculate the maximum channel temperature in the AlGaN/ GaN HEMT transistor with a different number of gate fingers is presented. The analytical form of the model and its simplicity enable the model to be easily used in SPICE models. The simulation results were compared with numerical data from COMSOL, which indicates the advantages of the model to predicate the maximum temperature regardless of the number of fingers.