Large On/Off and Rectification Ratios, Self-Compliance, High-Uniformity in Pt/Al2O3/TaOx/Ta Self-Rectifying Memristors

Since the self-rectifying memristor (SRM) can effectively mitigate the sneak path problem, it is favored by researchers for large-scale passive crossbar arrays. We successfully fabricated a prominent Pt/Al
2
O
3
/TaO
x
/Ta bilayer SRM device (~10
³
on/off ratio, ~10
³
rectification ratio, and high-uniformity) with a 100-μm feature size. A ~1 μA self-compliance current and <10 nA operation current are also achieved in this device. Moreover, on the premise of 10% read margin (RM), the maximum crossbar array scale can reach 133 kb. Finally, the switching and rectifying mechanisms of the Pt/Al
2
O
3
/TaO
x
/Ta SRM device are analyzed by band diagram. This bilayer structure SRM may provide a promising candidate for 3D integration.