Design and Fabrication of 860V SiC Trench MOSFET with Stripe and Rectangular Cells

In this paper, the SiC trench MOSFETs with stripe cells and rectangular cells are both designed and fabricated on the 6-inch SiC wafer. Preliminary measurements demonstrate that the fabricated SiC trench MOSFET with stripe cells and rectangular cells could achieve a breakdown voltage of 980V and 860 V at a drain leakage current of 4.5 μA, respectively. The one with rectangular cells shows a current density of 10 mA/cm
²
at a drain voltage of 2 V, which has a 1.6 times larger drain current density compared with the other one with stripe cells.