Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current

In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance,
${g}_{m}$
, of 2727
$\mu \text{S}/\mu \text{m}$
which is among the highest values reported for In
_0.53
Ga
_0.47
As FinFETs. In addition, subthreshold performances are improved with leakage current (
${I}_{ \mathrm{\scriptscriptstyle OFF}}$
) of
$1.13\times 10^{-{4}}~\mu \text{A}/\mu \text{m}$
, subthreshold swing (SS) of 78 mV/dec, drain-induced barrier lowering (DIBL) of 55 mV/V, and equivalent oxide thickness (EOT) ~0.8 nm. These excellent results are attributed to the strong electrostatic control and the superior high-
$\kappa $
/InGaAs interface quality achieved by scaled fin width and RP passivation.