Simscape approximative PWL models of Jo and HP ideal memristors

In this paper, the linear combination of two-segment PWL functions is used to approximate flux-charge nonlinear characteristics of Jo and HP ideal memristors. It is shown that the used approximation is canonical. Described approximative PWL method avoids the so-called terminal state problem and it can be used to model an arbitrary ideal memristor, enabling a tradeoff between time and accuracy of numerical simulation. The models are implemented in Simscape environment for simulating multidomain physical systems.