TCAD Simulation Study of Source and Gate Material-Engineered Double Gate Tunnel Field Effect Transistor

The paper aims at analyzing the performance of device parameters of Double-Gate Tunnel Field-Effect Transistor (DG TFET) by availing material engineering to source and gate region. Using non-local tunneling model, simulations are accomplished using Technology Computer Aided Design (TCAD). Comparative analysis of Silicon Double gate TFET(Si DG TFET)and Germanium material as source Double-gate TFET(Ge DG TFET) is carried out and the best device architecture for low power and high frequency operation is determined. Employing High K HfO2 and low K SiO2 hetero-dielectric material will enhance ON current and reduces ambipolarity of the device.