Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices

We demonstrate that a pure nitric oxide treatment at elevated temperatures provides a stable p-doping for monolayer WSe
₂
. This approach allows achieving record high hole current densities of ~
$300 \mu \text{A} / \mu \text{m}$
and low contact resistances of
$\sim 950 \Omega \cdot \mu \text{m}$
, while preserving the transistor on/off current ratio >
$2\times 10$
⁶
. This scalable pathway significantly improves the performance of p-type WSe
₂
transistors, opening new opportunities for advancing 2D integration.