Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors

In this work, the deep-level trapping behaviour of GaN-on-GaN current aperture vertical electron transistors (CAVETs) is characterised by means of current transient measurements and compared to AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on the same wafer. To the best of our knowledge, this represents the first analysis of deep-level traps in a GaN-based CAVET. In both structures, a single deep-level with an activation energy of (1.086 ± 0.015) eV (CAVET) and (0.812 ± 0.032) eV (HEMT) is found to dominate the observed transient responses.