Development and Thermal Characterization of a Low Resistance SiC Module

A low conduction resistance 1200 V/ 4 m$\Omega$ SiC power module is fabricated and characterized for its thermal performance. The design and fabrication of the power module is presented. The parasitic resistance distribution from the module prototype is measured and shows that it is critical to minimize the source bond wire and contact resistance for such low on-state resistance module. The steady-state thermal tests are performed, and the temperature distribution of the fabricated module is measured and validated. A FEA model of the SiC module is built and validated by the steady-state thermal tests. Then the transient thermal performance or surge current capacity is studied. It shows that at least 4 bond wires are required for each SiC die such that the module package will not limit the surge current capacity of SiC chips.