A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology

This paper reports the layout approaches and resulting static, dynamic, and short-circuit (SC) ruggedness characteristics of 1.2 kV power MOSFETs fabricated on a 6-inch 4H-SiC substrate. Different layout topologies (linear and hexagonal) and different design variations (with and without bridge of P-well) were investigated to study their effect. It was experimentally demonstrated that 1) the hexagonal layout topology enables a low specific on-resistance ($\text{R}_{\text{o}\text{n}.\text{s}\text{p}}$), 2) the linear MOSFET can be utilized in high frequency applications due to fast switching speed, and 3) the hexagonal topology with bridge offers greater reliability and ruggedness.