Integration of β-Ga2O3 on Si (100) for Lateral Schottky Barrier Diodes

Gallium Oxide (Ga
2
O
3
) is an emerging semiconductor for next-generation power electronics. Ga
2
O
3
has been used as a substrate to deposit Ga
2
O
3
thin film in most of the previously reported works. However, Ga
2
O
3
substrate is costly which makes the technology too expensive. Thus, the cost-effective integration of Ga
2
O
3
with the existing silicon technology is the primary motivation for the present research. In this context, the β-Ga
2
O
3
film has been deposited on Si (10 0) substrate using pulsed laser deposition. XRD pattern of the deposited film shows the single crystalline nature with β-phase of Ga
2
O
3
. FESEM results confirm the film surface is smooth and uniform. Fabricated Schottky barrier diodes (SBDs) show good device performance with significantly high breakdown voltage and low ideality factor. Baliga’s Figure of merit (V
²
BR
/R
ON
) has been computed to be 0.021 MWcm
^-2
. The present research has evaluated the feasibility of cost-effective integration of β-Ga
2
O
3
with well-established technology Si and it would provide a new research opportunity of β-Ga
2
O
3
on Si with potential commercial applications as well as challenges to overcome for high-performance power devices soon.