A Sextuple Cross-Coupled Dual-Interlocked-Storage-Cell based Multiple-Node-Upset Self-Recoverable Latch

As transistor feature sizes continue to scale down, the susceptibility of integrated circuits to harsh-radiation induced multiple-node-upsets (MNUs), such as double-node upsets (DNUs) and triple-node upsets (TNUs), is increasing. This paper presents an MNU self-recoverable hardened latch (namely SCDMSH) based on sextuple cross-coupled dual-interlocked-storage-cells (DICEs). The latch consists of eight transmission gates and six interlocked DICE cells. Due to the interlocking mechanism constructed from single-node-upset-self-recoverable DICE cells, the latch can self-recover from any possible single node upset (SNU), DNU and TNU. Simulation results validate the SNU, DNU and TNU self-recoverability of the proposed latch. Simulation results also demonstrate that the SCDMSH latch can approximately save 49% silicon area at the cost of moderate delay and power, compared with the state-of-the-art TNU self-recoverable reference latch (TNURL) of the same-type.