Thermally Evaporated GaSb Thin Film Grown From TVDS Method for Optical Applications

In this work, a new crystal growth technique has been used i.e. Thermo Vertical Direction Solidification (TVDS), designed and developed in our laboratory to grow undoped GaSb ingot from high purity Ga and Sb host materials. The grown ingot was then put inside thermal evaporation unit to deposit GaSb film on quartz substrate. The structural study of the grown GaSb thin film from the XRD characterization revealed that grown film was polycrystalline in nature. The electrical properties like carrier concentration, Hall-coefficient, mobility, resistivity etc of the film were studied by performing Hall-Effect measurements by Van Der Pauw method. It was found that for eutectic GaSb compound, thermal-evaporation is very much suitable method to deposit GaSb thin film with less complexity. Therefore, two terminal devices can be fabricated from the GaSb films by adding coplanner electrodes to design and investigate optical devices like photo detectors, optical communication devices, infrared diodes etc.