Simple Trapping Model for GaN HEMTs

A simple model to describe the influence of trapping on the RF electrical behavior of GaN HEMTs is presented. The trapping models are incorporated into a simplified FET model. The FET model is compared with pulse transient measurements made on a variety of test samples, and used for predictions of RF and modulated-signal performance, to illustrate how trapping can affect the behavior of real FETs. This model is used for comparison of different technology approaches and for trend analysis.