Anisotropic Magneto-Resistive Sensor Effect based Sensor using Daisy Chain on Polyether Ether Ketone Substrate

To improve the signal of sensors based on the anisotropic magneto-resistive (AMR) effect, the individual MR stripes are geometrically adapted to a specific pole length and connected by meander arcs. Using the high performance plastic polyether ether ketone (PEEK) that is set up for the method of laser direct structuring the substrates can be assigned a direct functionalization. Therefore, electrical connections to the backside are easily created by laser-drilled through-platings, whereas system integration on silicon requires further processes and equipment and is not always feasible. However, if a magnetic field is applied in parallel to the MR stripes (the non-sensitive axis), a change in resistance is still produced of the manufactured AMR sensors on Si of approx. 0.2%, since the current direction in the meander arcs is locally perpendicular to the magnetic field. Using non-MR material to connect the meandric arcs on the backside of the PEEK eliminates the undesired resistance change in the nonsensitive axis and improves the angle dependent measurement.