Linear organic transistor based temperature sensor between 230 and 330 K

In this paper, the stability and the linearity of a single-ended temperature sensor, consisting of a diode-connected organic thin film transistor (OTFT), are investigated in a wide temperature range from 230 to 330 K. While the sensor fabricated on silicon dioxide (SiO
2
) shows instability due to threshold voltage shift affected by temperature, the device in which SiO
2
is covered by a polymeric buffer layer shows a good stability with an error lower than 1%. It also achieves a linearity of 99.95% when biased with a current of 22 nA, with a high sensitivity of about 100 mV/K, exceeding that of silicon- based sensors. The model used to describe the device behavior demonstrates that the linearity is given by the compensation of two non-linear functions of temperature.