Optoelectrothermoelectric properties of ternary chalcogenides thin films of CuSbS2 and Cu12Sb4S13

In this work, the preparation and study of two-phases as a thin film of CuSbS
2
and Cu
12
Sb
4
S
13
respectively is reported. These samples were obtained through a two-stage process: the sequential deposition of Sb
2
S
3
and CuS, varying the thickness, on glass substrates and annealing at 350 °C in a nitrogen atmosphere. Subsequently, the films were characterized by Raman spectroscopy, ultraviolet-visible spectroscopy, EDS analysis, Hall effect and Seebeck coefficient. The objective was to study the properties of films for thermoelectric applications. The best sample was obtained with an initial thickness of 400 nm of Sb
2
S
3
and 180 nm of CuS (ratio of 2.22). This sample, called CSS 2.22, shows some compounds rich in Cu. The band gap of the sample was 1.83 eV. Its charge carries concentration was with a p-type conductivity. The conductivity value was
$5.223\times 10^{2}\ \Omega^{-1}cm^{-1}$
and the Seebeck coefficient was of
$54.3 \mu V/K$
. Finally, the power factor value was
$1.54\ \mu W/cm\cdot K$
at 60°C.