A High-Voltage Series-Stacked IGBT Switch With Output Pulse Shaping Capability to Reduce EMI Generation

Series-connected insulated gate bipolar transistors (IGBTs) are vastly adopted in high-voltage/power converters. It has been shown in prior researches that shaping the switching element transient voltage to an “S”-shape profile decreases EMI considerably. This article proposes a series-stacked IGBT switch (SSIS) with pulse shaping capability. According to this feature, the voltage of the SSIS has a Gaussian profile in the rising time interval. The method works based on the specific delayed operation of the series-connected IGBTs. In this approach, all IGBTs are turned on/off as fast as possible. Hence, the EMI reduction is not obtained at the expense of the switching power loss increment. Moreover, the power loss relevant to the delayed operation of the IGBTs transfers to the main dc bus. Thus, the overall efficiency is not affected by the proposed approach. In order to validate the proposed approach, PSPICE simulations as well as the experimental results are provided.