Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology

This paper presents reliability assessment of basic integrated circuits designed for analog and RF applications based on extensive circuit simulations using the aging compact model, HiCuM-AL v3.0, dedicated to SiGe HBTs. The physic-based aging compact model implemented within HiCuM model is based on trap generation-annihilation mechanisms as well as the Fick hydrogen diffusion law. The model has been validated against results from HBT aging tests under various stress conditions followed by aging model parameter extraction. Due to its extensive use in integrated circuit blocks, different current mirror configurations subjected to mixed-mode stress conditions are studied and analyzed in order to quantify the impact of HC degradation on individual HBTs as well as on overall circuit performances.