Complementary Two-Dimensional (2-D) MoS2 FET Technology

This paper demonstrates complementary 2-D FETs based on molybdenum disulfide, MoS
2
, as the active film. The n-type (n-FET) and p-type (p-FET) characteristics are obtained from undoped and Nb-doped MoS
2
, respectively. We have achieved similar output current drives and high on-off current ratios of more than 10
⁶
for both devices. Based on the proposed MoS
2
FET technology, a complementary metal-oxide-semiconductor (CMOS) inverter circuit with a gain of around 20 and 85% total noise margin at a 3 V supply, is integrated, exhibiting the potential of the proposed technology for thin film applications such as in flexible electronic circuits.