Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects

The Ni/GaN Schottky barrier IMPATT diode with n-type GaN deep level defects is optimized in this paper by adjusting its internal electric field. The optimized IMPATT diode shows the improved RF output power of 1.29 MW/cm
²
with efficiency of 12.4 % at 220 GHz, while the original diode's maximum RF output power is 0.71 MW/cm
²
with efficiency of 4.7 % at 220 GHz under the same defects density of 12.8 × 10
¹⁷
cm
⁻³
.