Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

The wide bandgap semiconductor material 4H-SiC has high reliability epitaxy, high electron mobility, ultra-high band gap width, large electron saturation drift speed, large critical breakdown field strength and low mobility, Low anisotropy and other excellent characteristics. Power devices based on SiC materials have been widely used in power grids, ships, high-speed rail, electric vehicles and other fields. Among many power electronic devices, SiC MOSFETs have been used in UHV DC transmission, electric vehicles and other fields due to their excellent high-frequency characteristics, high-temperature characteristics, and high-speed switching characteristics. This article takes 30 1200V/20A SiC MOSFETs developed by the Global Energy Interconnection Research Institute Co.Ltd as the research object, and evaluates the changes in the dynamic and static characteristics of SiC MOSFETs through standard deviation, skewness, kurtosis, deviation and coefficient of variation. The specific parameters include on-resistance R
DS(on)
, threshold voltage V
GS(th)
, transconductance g
fs
, drain-source capacitance C
DS
, gate-drain capacitance C
GD
, gate-source capacitance dispersion C
GS
, rise time t
r
, fall time t
f
, turn-on delay t
d(on)
and turn-off delay t
d(off)
.