Proper Pulsewidth Setting to Avoid Underestimated Switching Loss in HV-IGBT Characterization

This letter highlights the importance of appropriate pulsewidth duration of the double-pulse test for the high-voltage insulated gate bipolar transistor modules, in order to obtain the correct switching characterization and avoid underestimation in losses. Otherwise, it might cause improper design in power converters, especially in their thermal management. It demonstrates how the first on-state pulsewidth during the test needs to be set long enough to characterize the switching-off of devices correctly. IGBT modules made by the leading European, Japanese, and Chinese manufacturers with voltage ratings spanning 3.3, 4.5, and 6.5 kV are tested for validation and guidance purposes. Moreover, the mechanism and impact factors of this pulsewidth effect are also investigated.