Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs

In this article, the impacts of the
off
-state gate bias (
V
_GS,OFF
) on dynamic
on
-resistance (
R
_ON
) are systematically investigated in commercial Schottky-type
p
-GaN Gate high-electron-mobility transistors. Double-pulse tester and pulsed
I
–
V
system are adopted to evaluate the dynamic
R
_ON
with various
off
-state gate and drain bias (
V
_DS,OFF
) under hard- and soft-switching conditions. More negative
V
_GS,OFF
can aggravate the dynamic
R
_ON
degradation under both soft- and hard-switching, especially when switching with a high
V
_DS,OFF
. The impacts of
V
_GS,OFF
on switching transients and
off
-state stress are investigated separately to reveal the underlying mechanisms, which are found to be associated with the generation and movements of holes. The
off
-state gate bias of the voltage-driving scheme needs to be carefully considered according to the identified mechanisms in terms of dynamic
on
-resistance degradation.