Si MPS with CIBH Structure for Fast Recovery Applications

In this paper, a new fast recovery diode concept realizing low reverse recovery time, high dynamic ruggedness and good trade-off between dynamic and static characteristics is proposed. Controlled injection of backside holes (CIBH) structure is implemented at the cathode of merged PIN/Schottky (MPS) diode, which can reduce the cathode injection efficiency during on-state and suppress the fast extraction of carriers during reverse recovery process. Through Sentaurus TCAD simulation, the proposed structure achieved a reverse recovery time of 36ns and a reverse recovery peak current density of 325.2A/cm
²
at the reverse voltage of 200V and the forward current density of 100A/cm
²
, which is improved by 42.9% and 35.7% compared with the MPS diode. Moreover, in oscillation test, the oscillation time and voltage amplitude are optimized by 50% and 37.3% respectively compared with MPS diode.