VHDL-AMS design of a MOST model including deep submicron and thermal-electronic effects

The paper presents an application of the VHDL-AMS formalism to the model of a n-MOS transistor named EKV. Our model takes into account several new features specific to deep submicron technology (parasitic resistors and overlap capacitors induced by LDD), and thermal-electronic interactions. We then give some examples of application of this innovative EKV MOS model (inverter, thermal-opto-electronic coupling).