A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics

In order to improve the forward performance of the conventional Ga
2
O
3
trench Schottky barrier diode (T-SBD), a new Ga
2
O
3
T-SBD structure is proposed. Compared to the conventional Ga
2
O
3
T-SBD, the proposed T-SBD introduces two Schottky contacts on both sidewalls of the trench. The simulation results show that the forward current density and the specific on -resistance of the proposed T-SBD are significantly improved, at the expense of a small leakage current increase and breakdown voltage decrease. Thus, the figure of merit (FOM) of proposed Ga
2
O
3
T-SBD is also improved compared with the conventional one.